66 Infos zu Ralf Granzner
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Lebt in
- Ilmenau
Infos zu
- Frank Schwierz
- Juraj Breza
- Juraj Racko
- Alsharef
- Mohamed
- Hochfrequenzanwendungen
- Ladislav Harmatha
- MIM
- Miroslav Mikolášek
1 Aktuelle Nachrichten
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2 Profile in Sozialen Netzwerken
B Hadam | AceMapM Heuser, M Baus, B Hadam, O Winkler, Bernd Spangenberg, Ralf Granzner, M C Lemme, H Kurz Concept of Floating Dot Memory Transistors on Silicon on insulator Substrate · http://linkinghub.elsevier.com/retrieve/pii/S X · Microelectronic Engineering - O Winkler, F Merget, M Heuser, B Hadam, ...
V M Polyakov | AceMapRalf Granzner, V M Polyakov, V Cimalla, Oliver Ambacher, Frank Schwierz High Voltage Stress Time Dependent Dispersion Effects in Algan Gan Hemts · http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber= _ M Wespel, M Dammann, V M Polyakov, R Reiner, P Waltereit, Brigitte Weiss, R Quay, ...
8 Bücher zum Namen
Low-Dimensional Functional Materials | downloadaf.de1lib.org › book243 Atabek E. Atamuratov, Ralf Granzner, Mario Kittler, Zuhra Atamuratova, Mahkam Halillaev, and Frank Schwierz 21 Anyon Bosonized 2D Fermions or a Single ...
beluga - Exemplare: Nanometer-MOSFETsfür Digital- und...Nanometer-MOSFETsfür Digital- und Hochfrequenzanwendungen ; vorgelegt von Ralf Granzner. Kein Bild verfügbar. Bibliographische Detailangaben. 1.
Theoretical Investigation of Trigate AlGaN/GaN HEMTs | Alsharef ...ur.booksc.eu › book10, OCTOBER Theoretical Investigation of Trigate AlGaN/GaN HEMTs Mohamed A. Alsharef, Ralf Granzner, and Frank Schwierz, Senior Member, ...
GaN-Based Tri-Gate High Electron Mobility Transistors. - Erdin Ture -...My special thanks is conveyed to our partners at the Technical University of Ilmenau, PD Dr. Frank Schwierz, Dr. Ralf Granzner, and Mohamed Alsharef.
7 Dokumente
Granzner, Ralf [WorldCat Identities]Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen by Ralf Granzner( ) 3 editions published in in German and held by 21 WorldCat member ...
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility...IEEE Xplore, delivering full text access to the world's highest quality technical literature in engineering and technology. | IEEE Xplore
Empirical Model for the Effective Electron Mobility in Silicon...Ralf Granzner ; Fachgebiet Festkörperelektronik, Technische Universität Ilmenau, Ilmenau, Germany ; Vladimir M. Polyakov ; Christian Schippel ; Frank Schwierz.
(PDF) Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs...IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 12, DECEMBER Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs Ralf Granzner, Stefan...
10 Wissenschaftliche Publikationen
DFG - GEPRIS - Experimentelle und theoretische Untersuchung der ...Entwurf und Optimierung Elektronenstrahllithographie–basierter Herstellungspro-zesse für die anwendungsorientierte Nanotechnologie, Dissertation, Verlag Dr. Hut (2013) J. Bolten; Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen, Dissertation, Technische Universität Ilmenau, Ralf Granzner
Applied Surface Science | Progress in Applied Surface, Interface and...Juraj Racko, Peter Benko, Miroslav Mikolášek, Ralf Granzner, ... Juraj Breza. Pages : Download PDF. Article preview. select article A ...
dblp: Mohamed AlsharefList of computer science publications by Mohamed Alsharef
Ralf Granzner - dblpdblp.org › PersonsMohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture , Rüdiger Quay , Oliver Ambacher: Performance of tri-gate AlGaN/GaN HEMTs.
3 Allgemeine Veröffentlichungen
Benchmarking of straddle-Gate MOSFETs - CORE ReaderInstitut für Medientechnik an der TU Ilmenau. Dipl.-Ing. Christian Weigel. Dipl Technische Universität llmenau (Thür.) Ing. Ralf Granzner. PD Dr.-Ing.
Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by...Atabek E. Atamuratov, Ralf Granzner, Mario Kittler, Zuhra Atamuratova,. Mahkam Halillaev, and Frank Schwierz. Abstract In this work, the influence of a single ...
Trap-assisted tunnelling current in MIM structures | SpringerLinkTrap-assisted tunnelling current in MIM structures. Authors; Authors and affiliations. Juraj RackoEmail author; Miroslav Mikolášek; Ralf Granzner; Juraj Breza; Daniel Donoval; Alena Grmanová; Ladislav Harmatha; Frank Schwierz; Karol Fröhlich. Juraj Racko. 1. Email author; Miroslav Mikolášek. 1. Ralf Granzner. 2.
31 Webfunde aus dem Netz
Ralf Granzner - Biblioteka Nauki - YaddaInformacje o twórcy. Adres strony. Kopiuj. Twórca. Ralf Granzner. Nazwisko. Granzner. Imię. Ralf. Role. autor (szukaj). Adres. Dane kontaktowe ...
Ralf GranznerRalf Granzner, Frank Schwierz · th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) >
Electronics | Free Full-Text | Simulation of 50-nm Gate Graphene...Ralf Granzner. ,. Jörg Pezoldt. and. Frank Schwierz. *. Institut für Mikro-und Nanoelektronik, Technische Universität Ilmenau, PF , Ilmenau, ...Missing: Thür" | Must include:Thür" Ralf Granzner. ,. Jörg Pezoldt. and. Frank Schwierz. *. Institut für Mikro-und Nanoelektronik, Technische Universität Ilmenau, PF , Ilmenau, ... Missing: Thür" | Must include:Thür"
JEEECLadislav HARMATHA – Ralf GRANZNER – Frank SCHWIERZ: COUPLED DEFECT LEVEL RECOMBINATION IN THE P-N JUNCTION ; DOI: v [abstract] [full-paper]. Peter MRAK – Anton BIASIZZO – Franc NOVAK: ON MEASUREMENT UNCERTAINTY OF ADC NONLINEARITIES IN ...
KARLA - Katalogportal der UB Kassel: Intern:...Titel: Nanometer-MOSFETs für Digital- und Hochfrequenzanwendungen [Elektronische Ressource] / Ralf Granzner. Gutachter: Max Christian Lemme ; Hannes ...
Coupled Defect Level Recombination in the P—N Junction - Sciendosciendo.com › articlePeter Benko,Peter Benko. Ondrej Gallo,Ondrej Gallo. Ladislav Harmatha,Ladislav Harmatha. Ralf Granzner andRalf Granzner. Frank SchwierzFrank Schwierz ...
Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On ...www.cambridge.org › core › journals › article › cub...Elena Tschumak ,. Florentina Niebelschüetz ,. W. Jatal ,. Joerg Pezoldt ,. Ralf Granzner ,. Frank Schwierz and. Klaus Lischka. Show author details ...
Verhandlungen der Deutschen Physikalischen GesellschaftMathematische Modellierung charakteristischer Rauscheinflüsse auf MOSFET-Transistoren — •Sonja Engert, Ralf Granzner, Frank Schwierz ...
IEEE International Microwave Symposium | Technical Sessions2017.ims-ieee.org › technical-programs2 › com_technicalsessionsErdin Ture, Peter Brückner, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rüdiger Quay, Oliver Ambacher. Presenter: Erdin Ture, Fraunhofer Institute for ...
Citations: Browse the list of available citations - nanoHUB.orgRalf Granzner, Frank Schwierz, Vladimir Polyakov, (2007), "An Analytical Model for the Threshold Voltage Shift Caused by ...
KLEIN IN ILMENAU GANZ GROß - PDF Kostenfreier Download10 UNIPOLITIK Foto: ari Thüringer Zentrum für Maschinenbau TU Ilmenau ... Ing. Ralf Granzner, Wissenschaftsgebiet Mikro- und Nanoelektronik Dipl.
COMPARISON OF A STANDARD AND A SCHOTTKY DUAL GATE MOSFET - PDF1 Journal of ELECTRICAL ENGINEERING, VOL. 59, NO. 2, 2008, COMPARISON OF A STANDARD AND A SCHOTTKY DUAL GATE MOSFET Juraj Racko Ralf Granzner Frank Schwierz Juraj Breza Daniel Donoval Ondrej Kučera Peter Pinteš The article presents modelling and simulation of the electrical properties of ...
Cross Reference Logo Citations to this article as recorded by ...pubs.rsc.org › content › forwardlinksZhansong Geng, Bernd Hähnlein, Ralf Granzner, Manuel Auge, Alexander A. Lebedev, Valery Y. Davydov, Mario Kittler, Jörg Pezoldt and Frank Schwierz.
nanoHUB.org - Citations: Browse the list of available citationsnanoHUB.org is designed to be a resource to the entire nanotechnology discovery and learning community.
COUPLED DEFECT LEVEL RECOMBINATION IN THE PN ...iris.elf.stuba.sk › cgi-bin › jeeecLadislav HARMATHA – Ralf GRANZNER – Frank SCHWIERZ. The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at ...
On the suitability of DD and HD models for the simulation of...On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs. Ralf Granzner, V.M. Polyakov, F. Schwierz, M. Kittler, T. Doll.
Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and...Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation - Volume Donat J. As, Elena Tschumak, Florentina...
EDS IMAPS CS Conference Schedulewww.imaps.cz › eds2009Juraj Breza, Juraj Racko, Alena Grmanová, Ladislav Harmatha, Juraj Breza, Frank Schwierz, Ralf Granzner, Karol Fröhlich, Daniel Donoval, Slovak University of ...
Electron mobility in silicon nanowire mosfetsElectron mobility in silicon nanowire mosfets. more. COLLAPSE. Ralf Granzner, Frank Schwierz · Details · Contributors · Bibliography · Quotations · Similar ...
EDS IMAPS CS Conference ScheduleJuraj Racko, Alena Grmanova, Ralf Granzner, Peter Benko, Ladislav Harmatha, Frank Schwierz, Juraj Breza, Slovak University of Technology, Bratislava, ...
Bedeutung zum Vornamen Ralf
Männlicher Vorname (Deutsch, Englisch): Ralf; Althochdeutsch (Zweigliedriger Name); rat = der Rat, der Ratschlag, der Ratgeber; wolf = der Wolf; alter deutscher zweigliedriger Name; 'Ralf' ist die verkürzte Form von 'Radulf'
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